New Research in Physics

Effect of the rise time of the biasing voltage and neutral gas pressure on time evolution of the plasma boundary layer in plasma immersion ion implantation

Authors

Mansour Khoram 1
Kiomars Yasserian 2
Narges Shahandehgermi 3

1 Department of Physics, Bo. C., Islamic Azad University, Borujerd, Iran

2 Department of Physics, Ka. C., Islamic Azad University, Karaj, Iran

3 Karaj Branch, Islamic Azad University

https://doi.org/10.61882/jmrph.9.2.34
Abstract
Formation and temporal evolution of the plasma boundary layer in plasma immersion ion implantation is investigated in the presence of a static magnetic field. Here the ions are not cold and their temperature has been taken into account. By using a negative high-voltage pulse with an exponential ramp function on a target immersed in plasma, a positive space charge is formed and expanded around it. Rise time of the ramp function and pressure of the plasma neutral gas influence the formation and expansion of the plasma boundary layer near the target. The time evolution of the ion current density, ion kinetic energy and ion incident angle as well as the time evolution of the positive space charge and the width of the boundary layer are studied as functions of the neutral gas pressure and the rise time of the exponential ramp function. Our findings show that the time dependency of the variables of the plasma boundary layer is more pronounced for a longer rise time.

Keywords

Magnetized collisional plasma
Plasma Boundary Layer
Ion implantation
Rise time
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