New Research in Physics

Estimation of the mobility of one-dimensional gallium nitride nanowire system in the presence of ionized impurity

Authors

Batol Sharafi 1
Bahram Bahrami 2
Zeynab Kiamehr 3
Mojtaba goodarzi 1

1 Arak University of Technology

2 Tafresh University

3 Maritime University, Chabahar

https://doi.org/10.61882/jmrph.8.2.34
Abstract
Nitrate compounds III-N with a wide band gap have an important role in the field of optoelectronics and electronic devices with high frequency and power. Gallium nitride (GaN) has emerged as one of the most important and widely used semiconducting material among them. In this article, the electron mobility in one dimensional nanoribbon gallium nitride in the presence of impurities has been investigated and we compare our results with electron mobility of two dimensional systems. The Boltzmann transport equation and relaxation time approximation with considering the ionized impurity potential are used in calculations. The influence of different relevant physical parameters such as width of nanoribbon strips, Fermi energy and impurity density on the mobility is examined. Finally the electron mobility as a function of Fermi energy, distance between impurity with carriers and width of nanoribbons for gallium nitride is plotted. As it is expected, numerical results show that the mobility of GaN nanoribbon for very large width move toward mobility in two dimensional electron gas.

Keywords

Fermi Energy
Gallium Nitride
Boltzmann Transport Equation
Nanoribbon
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New Research in Physics
Volume 8, Issue 2 - Serial Number 15
February 2024
Pages 34-43

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