پژوهش های نوین فیزیک

تخمین تحرک‌پذیری سیستم یک بعدی نانونوار گالیم نیترید در حضور ناخالصی یونیزه شده

نویسندگان

بتول شرفی 1
بهرام بهرامی 2
زینب کیامهر 3
مجتبی گودرزی 1

1 دانشگاه صنعتی اراک

2 دانشگاه تفرش

3 دانشگاه دریانوردی و علوم دریایی چابهار

https://doi.org/10.61882/jmrph.8.2.34
چکیده
ترکیبات نیترات با گاف نواری وسیع خود جایگاه مهمی در حوزه اپتوالکترونیک و قطعات الکترونیکی با توان و فرکانس بالا یافته‌اند. از میان آنها GaN مهمترین و پرکاربردترین نیترید سه ظرفیتی است. در این پژوهش، تحرک‌پذیری سیستم یک بعدی نانونوار گالیم نیترید در حضور ناخالصی یونیزه شده در دمای صفر و دماهای پایین مورد بررسی قرار می‌دهیم و نتایج را با تحرک‌پذیری سیستم گاز الکترونی دو بعدی مقایسه می کنیم. برای محاسبات از معادله ترابرد بولتزمن در تقریب زمان واهلش با در نظر گرفتن پتانسیل ناخالصی یونیزه شده استفاده شده است. اثر پارامترهای فیزیکی مربوطه متفاوت از قبیل عرض نانونوار، انرژی فرمی و چگالی ناخالصی بر روی تحرک بررسی شده است. در پایان تحرک الکترونی بر حسب تابعی از انرژی فرمی، فاصله میان ناخالصی با حامل‌ها و عرض نانونوار گالیم‌نیترید رسم شده است. همانطور که انتظار می‌رفت، نتایج عددی نشان می‌دهد که تحرک نانونوار گالیم‌نیترید برای عرض‌های خیلی بزرگ به سمت تحرک گاز الکترونی یک صفحه کاملاً دو بعدی میل می‌کند.

کلیدواژه‌ها

تحرک‌الکترونی
پراکندگی ناخالصی یونیزه شده
معادله ترابرد بولتزمن
گالیم‌نیترید

عنوان مقاله English

Estimation of the mobility of one-dimensional gallium nitride nanowire system in the presence of ionized impurity

نویسندگان English

Batol Sharafi 1
Bahram Bahrami 2
Zeynab Kiamehr 3
Mojtaba goodarzi 1
1 Arak University of Technology
2 Tafresh University
3 Maritime University, Chabahar
چکیده English

Nitrate compounds III-N with a wide band gap have an important role in the field of optoelectronics and electronic devices with high frequency and power. Gallium nitride (GaN) has emerged as one of the most important and widely used semiconducting material among them. In this article, the electron mobility in one dimensional nanoribbon gallium nitride in the presence of impurities has been investigated and we compare our results with electron mobility of two dimensional systems. The Boltzmann transport equation and relaxation time approximation with considering the ionized impurity potential are used in calculations. The influence of different relevant physical parameters such as width of nanoribbon strips, Fermi energy and impurity density on the mobility is examined. Finally the electron mobility as a function of Fermi energy, distance between impurity with carriers and width of nanoribbons for gallium nitride is plotted. As it is expected, numerical results show that the mobility of GaN nanoribbon for very large width move toward mobility in two dimensional electron gas.

کلیدواژه‌ها English

Fermi Energy
Gallium Nitride
Boltzmann Transport Equation
Nanoribbon
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