New Research in Physics

The Study of Hole Transport in Organic Semiconductors with Time of Flight Method

Author

Ali Mahmoudloo

farhangian university

https://doi.org/10.61882/jmrph.8.2.15
Abstract
In this paper, we have used the time-of-flight method of a charge packet, which has been calculated by a voltage pulse of the driving speed and mobility of holes in organic semiconductors. This technique involves applying a voltage to the anode and calculating the time delay of the injection of charge carriers to the other electrode. This method is a simple method to check the properties of charge transport in organic semiconductors. In this section, under the influence of different voltages at room temperature, using the time-of-flight method, we have calculated the mobility of holes by applying the Scheer-Montreal model in organic semiconductors.

Also, the effect of the electric field on the mobility at two voltages of 100 V and 50 V was investigated for the flight time arrangement and it was observed that the mobility of the cavity at 100 V is higher than other voltages. The mobility of the hole, which was checked at different voltages at room temperature, is the best and most appropriate mobility for the hole in organic semiconductors, which corresponds to the applied voltage of 40 V to the sample.

Keywords

time of flight method
organic semiconductors
hole transport
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New Research in Physics
Volume 8, Issue 2 - Serial Number 15
February 2024
Pages 15-23

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