مطالعه ترابرد حفره ها در نیم رساناهای آلی با روش زمان پرواز الکترونیکی

نویسنده

دانشگاه فرهنگیان

چکیده
در این مقاله با استفاده در مدل های مختلف بازترکیب حاملین، اثرات پارامترهای اساسی بر عملکرد سلول های خورشیدی آلی نامتجانس و همچنین انتقال بار مورد بررسی قرار گرفته است. برای شبیه سازی این فرآیندها، دراین بخش بااستفاده ازحل خودسازگارمعادلات سوق-پخش ومعادله پواسون وهمچنین استفاده ازمدلهای مختلف بازترکیب ازطریق روش اجزاءمحدود،پارامترهای اساسی سلولهای خورشیدی آلی توده ای باساختار P3HT:PCBM موردمطالعه قرارگرفته است. همچنین با استفاده از مدل سوق-پخش و استفاده از مدل های مختلف ارائه شده برای بازترکیب حاملین بار، اثرات آلایش نوع n و p را در پلیمرهای مورد استفاده در یک سلول خورشیدی آلی توده ای با ساختار P3HT:PCBM مورد بررسی قرار داده ایم. در بیشتر مدل ها و مطالعات نظری ارائه شده، ناحیه فعال در سلول های خورشیدی آلی را به صورت ذاتی فرض می نمایند حال آنکه این فرض برای مطالعه و بهینه سازی آنها دارای اشکالاتی می باشدو می بایست سهم آلاییده کردن پلیمرها برای مطالعه بهتر، در نظر گرفته شود. ساختار مورد مطالعه در شکل(3) نشان داده شده است. این ساختار شامل ناحیه فعال با ساختار توده ای P3HT:PCBM به ضخامت 100 نانومتر می باشد.

کلیدواژه‌ها


عنوان مقاله English

The Study of Hole Transport in Organic Semiconductors with Time of Flight Method

نویسنده English

Ali Mahmoudloo
farhangian university
چکیده English

In this paper, we have used the time-of-flight method of a charge packet, which has been calculated by a voltage pulse of the driving speed and mobility of holes in organic semiconductors. This technique involves applying a voltage to the anode and calculating the time delay of the injection of charge carriers to the other electrode. This method is a simple method to check the properties of charge transport in organic semiconductors. In this section, under the influence of different voltages at room temperature, using the time-of-flight method, we have calculated the mobility of holes by applying the Scheer-Montreal model in organic semiconductors.

Also, the effect of the electric field on the mobility at two voltages of 100 V and 50 V was investigated for the flight time arrangement and it was observed that the mobility of the cavity at 100 V is higher than other voltages. The mobility of the hole, which was checked at different voltages at room temperature, is the best and most appropriate mobility for the hole in organic semiconductors, which corresponds to the applied voltage of 40 V to the sample.

کلیدواژه‌ها English

time of flight method
organic semiconductors
hole transport
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