Volume 1, Issue 1 ( Autumn & Winter 2017)
پژوهش های نوین فیزیک 2017, 1(1): 41-50 |
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seyedi arani T S, shahshahani F, sabet dariani R, sajad B, shoorshini S Z. Experimental Analysis of Optical Constants of Silicon Wafer by Reflection Spectrum in the Energy Range of 2-5 eV. پژوهش های نوین فیزیک 2017; 1 (1) :41-50
URL: http://jmrph.khu.ac.ir/article-1-28-en.html
URL: http://jmrph.khu.ac.ir/article-1-28-en.html
Tahereh sadat Seyedi arani 
, Fatemeh Shahshahani , Reza Sabet dariani , Batoul Sajad * , Seyedeh zahra Shoorshini
, Fatemeh Shahshahani , Reza Sabet dariani , Batoul Sajad * , Seyedeh zahra Shoorshini
Abstract: (2219 Views)
In this paper reflection index, absorption coefficient and optical constants of p-type silicon wafer with (100) orientation have been experimentally studied by using reflection spectrum from silicon surface. This wafer has been used as a substrate for fabrication of waveguide, so its optical properties have certain importance. In this paper, optical constants of Si wafer is calculated by using Kramers-Kronig method and reflection spectrum experimental data and then our results are compared with some references. The results have good agreement between optical constants of the references and reflection spectrum experimental data and calculated for existence sample in the Lab by using Kramers-Kronig method.
Type of Study: Research |
Subject:
Special
Received: 2017/10/28 | Accepted: 2017/10/28 | Published: 2017/10/28
Received: 2017/10/28 | Accepted: 2017/10/28 | Published: 2017/10/28
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