Journal of Modern Research Physics
Volume 8, Issue 2 (Autumn and Winter 2023 2024)
JMRPh 2024, 8(2): 34-43 |
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Sharafi B, Bahrami B, Kiamehr Z, goodarzi M. Estimation of the mobility of one-dimensional gallium nitride nanowire system in the presence of ionized impurity. JMRPh 2024; 8 (2) :34-43
URL: http://jmrph.khu.ac.ir/article-1-216-en.html
URL: http://jmrph.khu.ac.ir/article-1-216-en.html
Tafresh University
Abstract: (74 Views)
Nitrate compounds III-N with a wide band gap have an important role in the field of optoelectronics and electronic devices with high frequency and power. Gallium nitride (GaN) has emerged as one of the most important and widely used semiconducting material among them. In this article, the electron mobility in one dimensional nanoribbon gallium nitride in the presence of impurities has been investigated and we compare our results with electron mobility of two dimensional systems. The Boltzmann transport equation and relaxation time approximation with considering the ionized impurity potential are used in calculations. The influence of different relevant physical parameters such as width of nanoribbon strips, Fermi energy and impurity density on the mobility is examined. Finally the electron mobility as a function of Fermi energy, distance between impurity with carriers and width of nanoribbons for gallium nitride is plotted. As it is expected, numerical results show that the mobility of GaN nanoribbon for very large width move toward mobility in two dimensional electron gas.
Type of Study: Research |
Subject:
Special
Received: 2023/01/25 | Accepted: 2024/12/11 | Published: 2024/02/29
Received: 2023/01/25 | Accepted: 2024/12/11 | Published: 2024/02/29
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