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In this paper, for the first time, improved lasing performance of a red AlGaInP laser diode is demonstrated by introducing a new extreme triple asymmetric waveguide structure. In the new proposed waveguide structure, at the first step, n-waveguide and n- cladding layer thicknesses are increased, and then a triple asymmetry is introduced on the design of the n-type and p-type cladding and waveguide layers inside the red laser diode structure. The conventional symmetric and the new extreme triple asymmetric laser structures performances are theoretically investigated using simulation software PICS3D. 3D simulations of carrier transport, optical waveguiding and self-heating are combined self-consistently in the software. Numerical results show that the new proposed structure performance is significantly improved in comparison to the conventional symmetric structure.  The reasons of improvements are discussed in this investigation. The simulation results show that the use of the new structure reduces the overlap of the optical mode with of high doping regions. On the other hand, by reducing the electron leakage current, an increase in the stimulated recombination rate occurs, which leads to a decrease in the threshold current and an increase in the output power. By reducing the series resistance and increasing the thermal stability of the new proposed structure, the optimality of this structure is confirmed.   

Keywords: AlGaInP-based laser diode, Simulation, Power, Threshold current, extreme triple asymmetric waveguide, PICS3D.

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