Dr. Mohammad Daraee, Dr. Mohammad Esmail Azimaraghi, Dr. Mahdi Sadeghi, Dr. Seyed Ali Hashemizadeh, Volume 7, Issue 1 (9-2022)
Abstract
In this article, The silicon-based PIN-type photodiode were designed and fabricated for alpha radiation detection. The energy resolution is one of the most important parameters in this type of detectors; the increase in energy resolution depends on the reduction of the fabricated photodiode dark leakage current. So one of the most important goals in this research is Design and Fabrication of photodiode with low leakage current and high energy resolution. The C-V and I-V electrical tests and the 241Am alpha spectrum measurement are carried out after the completion of the manufacturing process and an excellent spectral response was observed.
